Dislocation reduction in GaN grown on Si(111) using a...

physica status solidi (b) 2010 Vol. 247; Iss. 7

Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer

Maik Häberlen, Dandan Zhu, Clifford McAleese, Tongtong Zhu, Menno J. Kappers, Colin J. Humphreys
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Volume:
247
Year:
2010
Language:
english
Pages:
4
DOI:
10.1002/pssb.200983537
File:
PDF, 890 KB
english, 2010
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