Strain relaxation in thick () InGaN grown on GaN/Si...

physica status solidi (b) 2012 Vol. 249; Iss. 3

Strain relaxation in thick () InGaN grown on GaN/Si substrate

Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano, Nobuhiko Sawaki
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Volume:
249
Year:
2012
Language:
english
Pages:
4
DOI:
10.1002/pssb.201100445
File:
PDF, 448 KB
english, 2012
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