The Carrier Concentration Dependence of the Debye...

physica status solidi (b) 1972 Vol. 53; Iss. 1

The Carrier Concentration Dependence of the Debye Temperature θ in Heavily Doped n-Ge

P. I. Baranskii, A. I. Elizarov
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Volume:
53
Year:
1972
Language:
english
Pages:
1
DOI:
10.1002/pssb.2220530155
File:
PDF, 215 KB
english, 1972
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