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Performance Analysis of InAs/AlSb MOS-HEMT by Self-Consistent Capacitance-Voltage Characterization and Direct Tunneling Gate Leakage Current
Ahmed, I., Chowdhury, S., Alam, M. H., Niaz, I. A., Khosru, Q. D. M.Volume:
72
Language:
english
Journal:
ECS Transactions
DOI:
10.1149/07202.0189ecst
Date:
May, 2016
File:
PDF, 205 KB
english, 2016