Analytical Model for Double-Gate Tunneling Field-Effect...

Journal of Computational and Theoretical Nanoscience 2013 / 05 Vol. 10; Iss. 5

Analytical Model for Double-Gate Tunneling Field-Effect Transistor (DG-TFET) Using Carrier Concentration Approach

Narang, Rakhi, Saxena, Manoj, Gupta, R. S., Gupta, Mridula
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Volume:
10
Language:
english
Journal:
Journal of Computational and Theoretical Nanoscience
DOI:
10.1166/jctn.2013.2829
Date:
May, 2013
File:
PDF, 297 KB
english, 2013
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