Electrical Characteristics of Floating-Gate Memory Devices...

Journal of Nanoscience and Nanotechnology 2009 / 03 Vol. 9; Iss. 3

Electrical Characteristics of Floating-Gate Memory Devices with Titanium Nanoparticles Embedded in Gate Oxides

Park, Byoungjun, Cho, Kyoungah, Yun, Junggwon, Koo, Yong-Seo, Lee, Jong-Ho, Kim, Sangsig
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Volume:
9
Language:
english
Journal:
Journal of Nanoscience and Nanotechnology
DOI:
10.1166/jnn.2009.438
Date:
March, 2009
File:
PDF, 3.31 MB
english, 2009
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