[IEEE 2015 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2015.12.7-2015.12.9)] 2015 IEEE International Electron Devices Meeting (IEDM) - Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices
Li, Yiming, Chang, Han-Tung, Lai, Chun-Ning, Chao, Pei-Jung, Chen, Chieh-YangYear:
2015
Language:
english
DOI:
10.1109/iedm.2015.7409827
File:
PDF, 961 KB
english, 2015