[IEEE 2016 IEEE International Solid-State Circuits Conference (ISSCC) - San Francisco, CA, USA (2016.1.31-2016.2.4)] 2016 IEEE International Solid-State Circuits Conference (ISSCC) - 7.3 A resistance-drift compensation scheme to reduce MLC PCM raw BER by over 100× for storage-class memory applications
Khwa, Win-San, Chang, Meng-Fan, Wu, Jau-Yi, Lee, Ming-Hsiu, Su, Tzu-Hsiang, Yang, Keng-Hao, Chen, Tien-Fu, Wang, Tien-Yen, Li, Hsiang-Pang, BrightSky, Matthew, Kim, SangBum, Lung, Hsiang-Lam, Lam, ChuYear:
2016
Language:
english
DOI:
10.1109/isscc.2016.7417943
File:
PDF, 2.19 MB
english, 2016