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[IEEE IC's - Kitakyushu, Japan (2004.05.27-2004.05.27)] Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's - 12.7kV ultra high voltage SiC commutated gate turn-off thyristor: SICGT
Sugawara,, Takayama,, Asano,, Agarwal,, Ryu,, Palmour,, Ogata,Year:
2004
Language:
english
DOI:
10.1109/wct.2004.240155
File:
PDF, 249 KB
english, 2004