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SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications - Aachen, Federal Republic of Germany (Sunday 28 October 1990)] Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - Silicon carbide layers produced by rapid thermal chemical vapor deposition
Ruddell, F. H., McNeill, D., Armstrong, Brian M., Gamble, Harold S., Razeghi, ManijehVolume:
1361
Year:
1991
Language:
english
DOI:
10.1117/12.24394
File:
PDF, 490 KB
english, 1991