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SPIE Proceedings [SPIE Asia-Pacific Optical Communications - Beijing, China (Sunday 7 November 2004)] Semiconductor and Organic Optoelectronic Materials and Devices - Low-leakage In0.53Ga0.47As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic InxGa1-xP buffer
Lin, Chi-Kuan, Kuo, Hao-Chung, Liao, Yu-Sheng, Lin, Gong-Ru, Zah, Chung-En, Luo, Yi, Tsuji, ShinjiVolume:
5624
Year:
2005
Language:
english
DOI:
10.1117/12.577048
File:
PDF, 318 KB
english, 2005