Effects of GaN barrier thickness on built-in electric field...

Japanese Journal of Applied Physics 2016 / 05 Vol. 55; Iss. 5S

Effects of GaN barrier thickness on built-in electric field and internal quantum efficiency of blue InGaN/GaN multiple quantum wells LED structures

Romanov, Ivan S., Prudaev, Ilya A., Kopyev, Viktor V.
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Volume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.05FJ15
Date:
May, 2016
File:
PDF, 434 KB
english, 2016
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