[IRE 1974 International Electron Devices Meeting (IEDM) - Washigton, DC, USA (1974.12.9-1974.12.11)] 1974 International Electron Devices Meeting (IEDM) - Sub-threshold and active-region characterization of ion-implanted buried-channel MOS transistors
Schemmert, W., Gabler, L., Hoefflinger, B.Year:
1974
Language:
english
DOI:
10.1109/iedm.1974.6219681
File:
PDF, 640 KB
english, 1974