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[IEEE 2006 International SiGe Technology and Device Meeting - Princeton, NJ, USA (15-17 May 2006)] 2006 International SiGe Technology and Device Meeting - A Study of Low Energy Phosphorus Implantation and Annealing in Si:C Epitaxial Films
Zhiyuan Ye,, Yihwan Kim,, Zojaji, A., Sanchez, E., Yonah Cho,, Castle, M., Foad, M.A.Year:
2006
Language:
english
DOI:
10.1109/istdm.2006.1715993
File:
PDF, 1.82 MB
english, 2006