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SPIE Proceedings [SPIE Microelectronic Manufacturing '99 - Santa Clara, CA (Wednesday 22 September 1999)] Microelectronic Device Technology III - Quantitative analysis of SILCs (stress-induced leakage currents) based on the inelastic trap-assisted tunneling model
Kamohara, Shiro, Okuyama, Yutaka, Manabe, Yukiko, Okuyama, Kosuke, Kubota, Katsuhiko, Park, Donggun, Hu, Chenming, Burnett, David, Tsuchiya, ToshiakiVolume:
3881
Year:
1999
Language:
english
DOI:
10.1117/12.360554
File:
PDF, 413 KB
english, 1999