SPIE Proceedings [SPIE Integrated Optoelectronic Devices...

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SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2007 - San Jose, CA (Saturday 20 January 2007)] Gallium Nitride Materials and Devices II - Comparison of optical properties of InGaN/GaN/AlGaN laser structures grown by MOVPE and MBE

Swietlik, T., Morkoc, Hadis, Litton, Cole W., Skierbiszewski, C., Czernecki, R., Franssen, G., Wiśniewski, P., Leszczyński, M., Grzegory, I., Mensz, P., Suski, T., Perlin, P.
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Volume:
6473
Year:
2007
Language:
english
DOI:
10.1117/12.700652
File:
PDF, 688 KB
english, 2007
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