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SPIE Proceedings [SPIE SPIE OPTO: Integrated Optoelectronic Devices - San Jose, CA (Saturday 24 January 2009)] Gallium Nitride Materials and Devices IV - Improvement in light extraction efficiency of high brightness InGaN-based light emitting diodes
Chen, Tzer-Perng, Morkoç, Hadis, Litton, Cole W., Hsu, Ta-Cheng, Luo, Chuan-yu, Chyi, Jen-Inn, Nanishi, Yasushi, Hsu, Ming-Chi, Lee, Tsung-Xian, Piprek, Joachim, Yoon, EuijoonVolume:
7216
Year:
2009
Language:
english
DOI:
10.1117/12.808458
File:
PDF, 779 KB
english, 2009