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Metal-Insulator Transition in Degenerately Doped Si and Ge under High Uniaxial Pressure
V. V. Baidakov, V. N. Ermakov, A. E. Gorin, V. V. Kolomoets, N. V. Stuchinska, V. A. Shenderovskii, D. P. TunstallVolume:
198
Year:
1996
Language:
english
Pages:
4
DOI:
10.1002/pssb.2221980121
File:
PDF, 258 KB
english, 1996