Effect of Al content on the microstructure in GaN grown on...

physica status solidi (c) 2003 Vol. 0 ; Iss. 7

Effect of Al content on the microstructure in GaN grown on Si by MOVPE

X. Chen, M. Ishiko, Y. Kuroiwa, N. Sawaki
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Year:
2003
Language:
english
Pages:
4
DOI:
10.1002/pssc.200303337
File:
PDF, 134 KB
english, 2003
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