MOVPE growth and n-type conductivity control of high-quality Si-doped Al0.5Ga0.5N using epitaxial AlN as an underlying layer
Yoshihiro Kida, Akira Iishiga, Tomohiko Shibata, Hiroyuki Naoi, Hideto Miyake, Kazumasa Hiramatsu, Mitsuhiro TanakaYear:
2003
Language:
english
Pages:
4
DOI:
10.1002/pssc.200303356
File:
PDF, 140 KB
english, 2003