Si doping effects on the electrical and structural properties of high Al composition AlxGa1−xN films grown by MOCVD
P. Cantu, S. Keller, F. Wu, P. Waltereit, A. E. Romanov, U. K. Mishra, J. S. Speck, S. P. DenBaarsYear:
2003
Language:
english
Pages:
4
DOI:
10.1002/pssc.200303359
File:
PDF, 136 KB
english, 2003