Improved crystallinity and polarity manipulation of MOVPE-grown GaN epilayers with deep sapphire-nitridation followed by Al-preflow at high temperatures
B. W. Seo, Y. Ishitani, A. YoshikawaYear:
2003
Language:
english
Pages:
5
DOI:
10.1002/pssc.200303372
File:
PDF, 127 KB
english, 2003