The compositional non-uniformity in an AlGaN capping layer...

physica status solidi (c) 2003 Vol. 0 ; Iss. 7

The compositional non-uniformity in an AlGaN capping layer of AlGaN/GaN pyramid grown on a (111) Si substrate by selective MOVPE

Y. Honda, M. Torikai, T. Nakamura, Y. Kuroiwa, M. Yamaguchi, N. Sawaki
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Year:
2003
Language:
english
Pages:
4
DOI:
10.1002/pssc.200303373
File:
PDF, 136 KB
english, 2003
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