Growth of high-quality non-polar AlN on 4H-SiC(11–20)...

physica status solidi (c) 2003 Vol. 0 ; Iss. 7

Growth of high-quality non-polar AlN on 4H-SiC(11–20) substrate by molecular-beam epitaxy

N. Onojima, J. Suda, T. Kimoto, H. Matsunami
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2003
Language:
english
Pages:
4
DOI:
10.1002/pssc.200303396
File:
PDF, 150 KB
english, 2003
Conversion to is in progress
Conversion to is failed