Electroluminescence efficiency of InGaN light emitting diodes: dependence on AlGaN:Mg electron blocking layer width and Mg doping profile
T. Stephan, K. Köhler, M. Kunzer, P. Schlotter, J. WagnerYear:
2003
Language:
english
Pages:
4
DOI:
10.1002/pssc.200303439
File:
PDF, 100 KB
english, 2003