Growth and evaluation of GaN with SiN interlayer by MOCVD

physica status solidi (c) 2003 Vol. 0 ; Iss. 7

Growth and evaluation of GaN with SiN interlayer by MOCVD

Yoshiki Naoi, Toshihiko Tada, Hongdong Li, Nan Jiang, Shiro Sakai
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Year:
2003
Language:
english
Pages:
5
DOI:
10.1002/pssc.200303442
File:
PDF, 122 KB
english, 2003
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