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Al2O3-based surface passivation and insulated gate structure for AlGaN/GaN HFETs
Tamotsu Hashizume, Shinya Ootomo, Hideki HasegawaYear:
2003
Language:
english
Pages:
5
DOI:
10.1002/pssc.200303446
File:
PDF, 552 KB
english, 2003