Dependences of GaN polarity on the growth temperatures of migration-enhanced-epitaxy-grown AlN in MOVPE
B. Cao, K. Xu, B. W. Seo, S. Arita, S. Nishida, Y. Ishitani, A. YoshikawaYear:
2003
Language:
english
Pages:
4
DOI:
10.1002/pssc.200303470
File:
PDF, 93 KB
english, 2003