Characteristics of amplified spontaneous emission of high indium content InGaN/GaN quantum wells with various silicon doping conditions
Yung-Chen Cheng, En-Chiang Lin, Shih-Wei Feng, Hsiang-Chen Wang, C. C. Yang, Kung-Jen Ma, Chang-Chi Pan, Jen-Inn ChyiYear:
2003
Language:
english
Pages:
4
DOI:
10.1002/pssc.200303474
File:
PDF, 243 KB
english, 2003