A comparative study on In-doping effects for MOVPE GaN...

physica status solidi (c) 2003 Vol. 0 ; Iss. 7

A comparative study on In-doping effects for MOVPE GaN films on Si(111) and sapphire substrates

A. Yamamoto, T. Tanikawa, Bablu K. Ghosh, Y. Hamano, A. Hashimoto, Y. Ito
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Year:
2003
Language:
english
Pages:
4
DOI:
10.1002/pssc.200303502
File:
PDF, 151 KB
english, 2003
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