CVD growth of 3C–SiC on various orientations of Si...

physica status solidi (c) 2003 Vol. 0 ; Iss. 7

CVD growth of 3C–SiC on various orientations of Si substrates for the substrate of nitride semiconductors

Taro Nishiguchi, Yusuke Mukai, Satoru Ohshima, Shigehiro Nishino
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Year:
2003
Language:
english
Pages:
4
DOI:
10.1002/pssc.200303524
File:
PDF, 162 KB
english, 2003
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