High voltage GaN-based power HEMTs with field plate...

physica status solidi (c) 2003 Vol. 0 ; Iss. 7

High voltage GaN-based power HEMTs with field plate technique: Breakdown voltage and switching characteristics

Yoshiharu Takada, Wataru Saito, Masahiko Kuraguchi, Ichiro Omura, Kunio Tsuda
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Year:
2003
Language:
english
Pages:
4
DOI:
10.1002/pssc.200303531
File:
PDF, 75 KB
english, 2003
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