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Annealing effects of ZnO films deposited on (0001) Al2O3 and (111) Si substrate by RF sputtering and GaN layer grown on ZnO films used as buffer layer by MOCVD
S.-R. Jeon, M.-A. Yu, S. K. Shim, G. M. Yang, S. J. SonYear:
2003
Language:
english
Pages:
5
DOI:
10.1002/pssc.200303554
File:
PDF, 208 KB
english, 2003