The role of Ge predeposition temperature in the MBE epitaxy...

physica status solidi (c) 2004 Vol. 1; Iss. 2

The role of Ge predeposition temperature in the MBE epitaxy of SiC on Ssilicon

F. M. Morales, Ch. Zgheib, S. I. Molina, D. Araújo, R. García, C. Fernández, A. Sanz-Hervás, P. Masri, P. Weih, Th. Stauden, V. Cimalla, O. Ambacher, J. Pezoldt
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Volume:
1
Year:
2004
Language:
english
Pages:
6
DOI:
10.1002/pssc.200303940
File:
PDF, 428 KB
english, 2004
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