Improvement of Electrical Properties of MOCVD Grown...

physica status solidi (c) 2003 Vol. 0 ; Iss. 1

Improvement of Electrical Properties of MOCVD Grown AlxGa1—xN/GaN Heterostructure with Isoelectronic Al-Doped Channel

Jae-Hoon Lee, Jong-Hyun Kim, Sung-Bum Bae, Kyu-Suk Lee, Jae-Seung Lee, Jong-Wook Kim, Sung-Ho Hahm, Jung-Hee Lee
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Year:
2003
Language:
english
Pages:
4
DOI:
10.1002/pssc.200390033
File:
PDF, 123 KB
english, 2003
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