Integration of ferroelectric SrBi2Ta2O9 -based capacitors...

physica status solidi (c) 2004 Vol. 1; Iss. Supplement

Integration of ferroelectric SrBi2Ta2O9 -based capacitors in 0.35 μm CMOS technology

J. G. Lisoni, J. A. Johnson, L. Goux, M. Schwitters, V. Paraschiv, D. Maes, L. Haspeslagh, C. Caputa, P. Casella, R. Zambrano, G. Vecchio, H. Monchoix, L. Van Autryve, D. J. Wouters
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Volume:
1
Year:
2004
Language:
english
Pages:
1
DOI:
10.1002/pssc.200404886
File:
PDF, 292 KB
english, 2004
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