Photoluminescence analysis of Te-doped...

physica status solidi (c) 2004 Vol. 1; Iss. Supplement

Photoluminescence analysis of Te-doped In0.14Ga0.86As0.13Sb0.87 epitaxial layers as a function of temperature

J. Díaz-Reyes, J. G. Mendoza-Álvarez, J. Cardona-Bedoya, M. L. Gómez-Herrera, J. L. Herrera-Perez
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Volume:
1
Year:
2004
Language:
english
Pages:
1
DOI:
10.1002/pssc.200404896
File:
PDF, 112 KB
english, 2004
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