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Effect of Ge incorporation on stoichiometric composition of 3C-SiC thin films grown on Si(111) substrates
Ch. Zgheib, M. Kazan, P. Weih, O. Ambacher, P. Masri, J. PezoldtVolume:
2
Year:
2005
Language:
english
Pages:
4
DOI:
10.1002/pssc.200460427
File:
PDF, 95 KB
english, 2005