Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT

physica status solidi (c) 2005 Vol. 2; Iss. 3

Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT

E. Kaminska, A. Piotrowska, A. Szczesny, A. Kuchuk, R. Lukasiewicz, K. Golaszewska, R. Kruszka, A. Barcz, R. Jakiela, E. Dynowska, A. Stonert, A. Turos
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Volume:
2
Year:
2005
Language:
english
Pages:
5
DOI:
10.1002/pssc.200460620
File:
PDF, 507 KB
english, 2005
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