Dry etching of AlxGa1–xN/GaN by CCl2F2 chemistry for device...

physica status solidi (c) 2005 Vol. 2; Iss. 7

Dry etching of AlxGa1–xN/GaN by CCl2F2 chemistry for device isolation

W.S. Lau, B.P. Singh, Joy B.H. Tan, S. Gunawan, Y.Y. Jiang, Richard Thet Wynn, Vanissa S. W. Lim, A.D. Trigg
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
2
Year:
2005
Language:
english
Pages:
4
DOI:
10.1002/pssc.200461324
File:
PDF, 82 KB
english, 2005
Conversion to is in progress
Conversion to is failed