Growth of high-quality hexagonal InN on 3C-SiC (001) by...

physica status solidi (c) 2005 Vol. 2; Iss. 7

Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy

Hiroyuki Yaguchi, Yoshihiro Kitamura, Kenji Nishida, Yohei Iwahashi, Yasuto Hijikata, Sadafumi Yoshida
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Volume:
2
Year:
2005
Language:
english
Pages:
4
DOI:
10.1002/pssc.200461386
File:
PDF, 180 KB
english, 2005
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