High breakdown voltage AlGaN/GaN MIS-HFET with low leakage...

physica status solidi (c) 2005 Vol. 2; Iss. 7

High breakdown voltage AlGaN/GaN MIS-HFET with low leakage current

Masahiko Kuraguchi, Yoshiharu Takada, Wataru Saito, Ichiro Omura, Kunio Tsuda
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Volume:
2
Year:
2005
Language:
english
Pages:
4
DOI:
10.1002/pssc.200461416
File:
PDF, 109 KB
english, 2005
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