P-type doping in GaN through Be implantation

physica status solidi (c) 2005 Vol. 2; Iss. 7

P-type doping in GaN through Be implantation

Z. C. Feng, Y. J. Sun, L. S. Tan, S. J. Chua, J. W. Yu, C. C. Yang, W. Lu, W. E. Collins
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Volume:
2
Year:
2005
Language:
english
Pages:
5
DOI:
10.1002/pssc.200461458
File:
PDF, 261 KB
english, 2005
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