[IEEE 2015 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2015.12.7-2015.12.9)] 2015 IEEE International Electron Devices Meeting (IEDM) - Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four {111} facets by dry etch technology

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