High Gain Operation of GaAs Photoconductive Semiconductor...

IEEE Electron Device Letters 2016

High Gain Operation of GaAs Photoconductive Semiconductor Switch at 24.3 nJ Excitation

Xu, Ming, Liu, Rujun, Shang, Xiaoyan, Zhang, Qin, Shi, Wei, Guo, Gaoyuan

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Year:

2016

Language:

english

Journal:

IEEE Electron Device Letters

DOI:

10.1109/led.2016.2556858

File:

PDF, 585 KB

english, 2016

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