Gate leakage currents of AlGaN/GaN HEMT structures grown by...

physica status solidi (c) 2007 Vol. 4; Iss. 7

Gate leakage currents of AlGaN/GaN HEMT structures grown by metalorganic vapour phase epitaxy

T. Yamada, T. Tsuchiya, K. Imada, M. Iwami, J. Kikawa, T. Araki, A. Suzuki, Y. Nanishi
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Volume:
4
Year:
2007
Language:
english
Pages:
5
DOI:
10.1002/pssc.200674763
File:
PDF, 440 KB
english, 2007
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