Characterization of AlGaN/GaN MOSHFETs with Al2O3 as gate...

physica status solidi (c) 2007 Vol. 4; Iss. 7

Characterization of AlGaN/GaN MOSHFETs with Al2O3 as gate oxide

D. Gregušová, R. Stoklas, K. Čičo, G. Heidelberger, M. Marso, J. Novák, P. Kordoš
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Volume:
4
Year:
2007
Language:
english
Pages:
4
DOI:
10.1002/pssc.200674828
File:
PDF, 223 KB
english, 2007
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