Full band Monte Carlo study of ballistic effects in...

physica status solidi (c) 2008 Vol. 5; Iss. 1

Full band Monte Carlo study of ballistic effects in nanometer-scaled strained P channel Double Gate MOSFETs

K. Huet, C. Chassat, D.-P. Nguyen, S. Galdin-Retailleau, A. Bournel, P. Dollfus
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Volume:
5
Year:
2008
Language:
english
Pages:
4
DOI:
10.1002/pssc.200776558
File:
PDF, 578 KB
english, 2008
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