Effect of growth conditions on grown-in defect formation and luminescence efficiency in Ga(In)NP epilayers grown by molecular-beam epitaxy
D. Dagnelund, I. A. Buyanova, W. M. Chen, A. Utsumi, Y. Furukawa, A. Wakahara, H. YonezuVolume:
5
Year:
2008
Language:
english
Pages:
4
DOI:
10.1002/pssc.200777458
File:
PDF, 274 KB
english, 2008