![](/img/cover-not-exists.png)
Real-time ellipsometric study of Ge+ ion implanted SiO2 layers during fast annealing
V. A. Shvets, I. E. Tyschenko, S. I. Chikichev, V. Yu. ProkopievVolume:
5
Year:
2008
Language:
english
Pages:
3
DOI:
10.1002/pssc.200777815
File:
PDF, 181 KB
english, 2008