Real-time ellipsometric study of Ge+ ion implanted SiO2...

Real-time ellipsometric study of Ge+ ion implanted SiO2 layers during fast annealing

V. A. Shvets, I. E. Tyschenko, S. I. Chikichev, V. Yu. Prokopiev
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Volume:
5
Year:
2008
Language:
english
Pages:
3
DOI:
10.1002/pssc.200777815
File:
PDF, 181 KB
english, 2008
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